Tin-related shallow donor in indium selenide
Identifieur interne : 000509 ( Main/Exploration ); précédent : 000508; suivant : 000510Tin-related shallow donor in indium selenide
Auteurs : RBID : ISTEX:339_1988_Article_BF00615920.pdfEnglish descriptors
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Abstract
Hall-effect measurements in indium selenide samples doped with different amounts of tin are reported. The temperature dependance of free-electron concentration is interpreted through a single-donor single-acceptor model from which the ionisation energy of the tin related shallow donor (22 meV) and the compensation ratio are obtained. At low temperature the electron concentration departs from activated behaviour and tends to be constant. This can be interpreted through the existance of two-dimensional subbands related to interlayer planar aggregates of donor impurities that are located in energy below the tin-related donor level.
DOI: 10.1007/BF00615920
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Chevy</name><affiliation wicri:level="3"><mods:affiliation>Laboratoire de Physique de Milieux très Condensés, 4 Place Jussieu, Tour 13, F-75230, Paris Cedex 05, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique de Milieux très Condensés, 4 Place Jussieu, Tour 13, F-75230, Paris Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1988_Article_BF00615920.pdf</idno><date when="1988">1988</date><idno type="doi">10.1007/BF00615920</idno><idno type="wicri:Area/Main/Corpus">000561</idno><idno type="wicri:Area/Main/Curation">000561</idno><idno type="wicri:Area/Main/Exploration">000509</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.55</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Hall-effect measurements in indium selenide samples doped with different amounts of tin are reported. The temperature dependance of free-electron concentration is interpreted through a single-donor single-acceptor model from which the ionisation energy of the tin related shallow donor (22 meV) and the compensation ratio are obtained. At low temperature the electron concentration departs from activated behaviour and tends to be constant. This can be interpreted through the existance of two-dimensional subbands related to interlayer planar aggregates of donor impurities that are located in energy below the tin-related donor level.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="614a3b126cdba0a49316a935f54107fca77dc8f6"><titleInfo lang="eng"><title>Tin-related shallow donor in indium selenide</title></titleInfo><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Marí</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departament de Física Aplicada, Facultat de Física, Burjassot, 46100, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departament de Física Aplicada, Facultat de Física, Burjassot, 46100, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique de Milieux très Condensés, 4 Place Jussieu, Tour 13, F-75230, Paris Cedex 05, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Surfaces, Interfaces, and Layer Structures</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1987-10-08</dateCreated><dateCaptured encoding="w3cdtf">1988-01-06</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Hall-effect measurements in indium selenide samples doped with different amounts of tin are reported. The temperature dependance of free-electron concentration is interpreted through a single-donor single-acceptor model from which the ionisation energy of the tin related shallow donor (22 meV) and the compensation ratio are obtained. At low temperature the electron concentration departs from activated behaviour and tends to be constant. This can be interpreted through the existance of two-dimensional subbands related to interlayer planar aggregates of donor impurities that are located in energy below the tin-related donor level.</abstract><subject lang="eng"><genre>PACS</genre><topic>71.55</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1988</partNumber><partNumber>Volume: 46</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1988-06-01</dateIssued><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 15</identifier><recordInfo><recordOrigin>Springer-Verlag, 1988</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00615920</identifier><identifier type="matrixNumber">Art10</identifier><identifier type="local">BF00615920</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>125</start><end>129</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1988</recordOrigin><recordIdentifier>339_1988_Article_BF00615920.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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